At the recent IEEE International Electron Device Meeting (IEDM), Intel has shared updates on some of its processes primarily on two significant advancements in CPU technology: RibbonFET and PowerVia. These developments, which have been periodically shared by Intel, are now nearing the stage where they can be incorporated into manufacturing processes for upcoming products.
RibbonFET: The Next Evolution in Transistor Design
- What It Is: RibbonFET, Intel’s latest transistor architecture, represents a significant leap from the traditional FinFET design. It is Intel’s first new transistor architecture since the introduction of FinFET in 2011.
- Benefits: RibbonFET offers improved performance and efficiency, primarily due to its gate-all-around design. This design allows for better control of the current in three dimensions, which is crucial as transistor sizes continue to shrink. Compared to FinFET, RibbonFET enables a more efficient current flow through the transistor, leading to enhanced performance, especially as the industry moves towards smaller nanometer-scale technologies.
PowerVia: Revolutionizing Power Delivery in Chips
- What It Is: PowerVia is Intel’s innovative approach to power delivery within a chip. Unlike traditional methods where power is delivered from the top of the chip, PowerVia introduces backside power delivery.
- Advantages: This backside approach significantly improves the chip’s overall efficiency. By delivering power from the bottom, PowerVia frees up space on the top of the chip, allowing for more transistors and thus higher performance. This method reduces the distance power must travel, enhancing signal transmission and reducing power consumption compared to conventional top-side power delivery techniques.
Other Technologies
- 3D Stacked CMOS Transistors: Intel’s research at IEDM 2023 included the ability to vertically stack complementary field effect transistors (CFET) at a scaled gate pitch of 60 nanometers. This technology, combined with backside power and direct backside contacts, marks a significant advancement in transistor architecture.
- Integration of Silicon and GaN Transistors: Intel has successfully integrated silicon transistors with gallium nitride (GaN) transistors on the same 300 mm wafer, a first in the industry. This integration, known as “DrGaN,” is a promising solution for power delivery in high-performance computing.
- Advances in 2D Transistor Technology: Intel is also making strides in 2D transistor technology, particularly with transition metal dichalcogenide (TMD) materials. These materials could enable scaled transistor physical gate lengths below 10nm, a critical factor for future Moore’s Law scaling.
These advancements by Intel in RibbonFET, PowerVia, and other areas are not just incremental improvements but represent significant leaps in semiconductor technology. They are poised to play a crucial role in meeting the growing demands for more powerful and efficient computing solutions in the years to come.